ΤΡΑΝΖΙΣΤΟΡ N-CHANEL 60A 60V 2SK2313

2SK2313 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2SK2313

Type of 2SK2313 transistor: MOSFET

Type of control channel: N-Channel

Maximum power dissipation (Pd): 150W

Maximum drain-source voltage (Uds): 60V

Maximum drain-gate voltage (Udg):

Maximum gate-source voltage (Ugs):

Maximum drain current (Id): 60A

Maximum junction temperature (Tj):

Rise Time of 2SK2313 transistor (tr):

Drain-source Capacitance (Cd), pf:

Maximum drain-source on-state resistance (Rds), Ohm:

Manufacturer of 2SK2313 transistor: Toshiba

Package: TO-3P(N)

Application: power MOSFET (Nch single 30V