IRF630 N-channel MOSFET Transistor, 9 A, 200 V, 3-Pin TO-220
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Manufacturer STMicroelectronics Type of transistor N-MOSFET Technology MESH OVERLAY II Polarisation unipolar Drain-source voltage 200V Drain current 5.7A Power dissipation 75W Case TO220-3 Gate-source voltage ±20V On-state resistance 400mΩ Moun
- Item Code: 371064310000
- Help Code: IRF630
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Item Description
Manufacturer STMicroelectronicsType of transistor N-MOSFET
Technology MESH OVERLAY II
Polarisation unipolar
Drain-source voltage 200V
Drain current 5.7A
Power dissipation 75W
Case TO220-3
Gate-source voltage ±20V
On-state resistance 400mΩ
Moun
Κατασκευαστής STMicroelectronics
Τύπος τρανζίστορ N-MOSFET
Τεχνολογία MESH OVERLAY II
Πόλωση αμφιπολικό
Τάση πυρήνα - πηγής 200V
Ρεύμα αποστράγγισης 5.7A
Ισχύς απαγωγής 75W
Περίβλημα TO220-3
Τάση πύλης - πηγής ±20V
Αγώγιμη αντίσταση 400mΩ
Συναρμολόγηση THT
Είδος καναλιού εμπλουτισμένο
Ιδιότητες ημιαγωγικών εξαρτημάτων ESD protected gate
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