IRFS4410ZTRLPBF N-channel MOSFET, 97 A, 100 V HEXFET, 3-Pin D2PAK

Maximum Operating Temperature +175 °C
Number of Elements per Chip 1
Length 10.67mm
Transistor Configuration Single
Typical Turn-On Delay Time 16 ns
Brand Infineon
Typical Turn-Off Delay Time 43 ns
Maximum Continuous Drain Current 97 A
Package Type D2PAK (TO-263)
Maximum Power Dissipation 230 W
Series HEXFET
Mounting Type Surface Mount
Minimum Operating Temperature -55 °C
Width 11.3mm
Forward Transconductance 140s
Maximum Gate Threshold Voltage 4V
Height 4.83mm
Minimum Gate Threshold Voltage 2V
Maximum Drain Source Resistance 9 mΩ
Maximum Drain Source Voltage 100 V
Pin Count 3
Dimensions 10.67 x 11.3 x 4.83mm
Category Power MOSFET
Typical Gate Charge @ Vgs 83 nC @ 10 V
Transistor Material Si
Channel Mode Enhancement
Typical Input Capacitance @ Vds 4820 pF @ 50 V
Channel Type N
Maximum Gate Source Voltage -20 V, +20 V
Forward Diode Voltage 1.3V